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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 FEATURES Power dissipation PCM: 2 W (Tamb=25) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time VCE(sat) VBE(sat) fT VCE=5 V, IC=5A IC=2A,IB=0.4A IC=2A, IB= 0.4A Ic=500mA,VCE=10V f=1MHZ 123 unless otherwise specified) Test conditions MIN 700 400 9 1 100 8 5 40 30 1 1.2 4 80 0.7 3 V V MHZ TYP MAX UNIT V V V mA A Ic= 1mA, IE=0 Ic= 10mA, IB=0 IE= 1mA, IC=0 VCB= 700V, IE=0 VEB=9V, IC=0 VCE= 5V, IC= 2 A Cob tf ts VCE=10,IE=0, f=0.1MHz Vcc=125V, Ic=5A IB1=-IB2=1A pF s s CLASSIFICATION OF hFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 |
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